SMI3050, Focused Ion Beam System
Name Focused Ion Beam System
Type SMI3050
Overview The Focused Ion Beam (FIB) System achieves the world’s smallest beam diameter of 4nm. It consists of a high-performance FIB optical system, high-vacuum sample chamber, auxiliary chamber, specimen stage compatible with 50mm samples, vacuum evacuation system, and computer system. The scanning ion microscope function, sputter etching function with ion beam irradiation, and deposition function by squirting source gas and ion beam irradiation enables minute scale cross-section processing and observation of selected areas on a 50mm sample.
Features 1. The standard-accessory sample holder allows samples of various shapes handled in research fields to be adapted to the FIB system.
2. Optional auto-pilot software enables high-precision and high-throughput TEM sample fabrication.
3. Contact with the sample surface on the ar ea irradiated by the ion beam becomes possible by attaching the optional micro probing system. This micro-probing system can be inclined together with the specimen stage. By inclining the micro-probing system with the probe in contact with the sample surface enables ion beam irradiation from different angles resulting in highly flexible operation.
4. The auxiliary chamber (standard-accessory) allows a sample to be loaded on the system without exposing the sample chamber to air.
5. A high concentration gas atmosphere can be created around the ion beam irradiated area by attaching a second gas injector to the system. This is necessary for three-dimensional nanostructure fabrication by carbon deposition. The second gas injector has a retractable structure so not to compromise the basic functions of the SMI3050. Incorporating three-dimensional data created by the 3D-CAD system enables fabrication of complex forms.
SMI3050
Specifications
Sample size Maximum 50mm in size and12mm thick
Specimen stage 5-axis motorized eucentric tilting stage
X: 0 to 55mm, Y: 0 to 50mm, Z: 0 to 10mm,
θ: 0 to 360°, T: -3 to 60°
 Common Specifications 
Focused Ion Beam
Acceleration Voltage 5 to 30kV (5kV steps)
Secondary electron Observation Resolution 4nm at 30kV
Current Characteristics 4A/cm2 at IBEAM = 10pA
10A/cm2 at IBEAM = 100pA
20A/cm2 at IBEAM = 600pA
2A/cm2 at IBEAM = 10nA
Maximum Current 20nA
Maximum Current Density 30A/cm2 at IBEAM = 600pA
Maximum Field of View 2mm
Detector Secondary Electron Detector
Gas (deposition) Carbon or Tungsten
Software Windows® 2000
Standard Options
Detector Conversion Electrode Type Secondary
Electron/Secondary Ion Detector
Gas (Deposition) Platinum
Silicon Oxide
Gas (Etching) Silicon, Silicon Oxide Enhancement
Organic Matter Enhancement / Metal Reduction
Charge Neutralizer
Sample holder TEM sample fabrication holder
Micro-probing System
3 Dimensional Nano Structure Fabrication Retractable Carbon Gas Injector
Software Auto-pilot Software
Auto-finishing Software (A-TEM)
Automatic Cross-Section CD Measurement Software
Inspection Tool Linkage Software
CAD Navigation Linkage Software
Lift Out Manipulator Microscope
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